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SCH2805 rev.0 i page 1 of 6 i www.onsemi.com ordering number : enn7760 SCH2805 mosfet : p-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications features composite type with a p-channel sillicon mosfet (mch3314) and a schottky barrier diode (sb0105) contained in one package facilitating high-density mounting. [mosfet] low on-resistance. ultrahigh-speed switching. 4v drive. [sbd] short reverse recovery time . low forward voltage . specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss - -60 v gate-to-source voltage v gss 20 v drain current (dc) i d - -0.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% --2 a allowable power dissipation p d mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit 0.6 w channel temperature tch 150 c storage temperature tstg - -55 to +125 c [sbd] repetitive peak reverse voltage v rrm 50 v nonrepetitive peak reverse surge voltage v rsm 50 v a verage output current i o 100 ma surge forward current i fsm 50hz sine wave, 1 cycle 2 a junction temperature tj - -55 to +125 c storage temperature tstg - -55 to +125 c marking : qe ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: SCH2805/d
SCH2805 rev.0 i page 2 of 6 i www.onsemi.com electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0 --1 a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--0.3a 400 670 ms static drain-to-source on-state resistance r ds (on)1 i d =--0.3a, v gs =- -10v 1.3 1.7 ? r ds (on)2 i d =--0.2a, v gs =- -4v 1.6 2.3 ? input capacitance ciss v ds =--20v, f=1mhz 73 pf output capacitance coss v ds =--20v, f=1mhz 7 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 4 pf t urn-on delay time t d (on) see specified test circuit. 6 ns rise time t r see specified test circuit. 3.5 ns t urn-off delay time t d (off) see specified test circuit. 12.5 ns fall time t f see specified test circuit. 3 ns t otal gate charge qg v ds =--10v, v gs =--10v, i d =--0.5a 2.4 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--0.5a 0.6 nc gate-to-drain ?iller?charge qgd v ds =--10v, v gs =--10v, i d =--0.5a 0.2 nc diode forward voltage v sd i s =--0.5a, v gs =0 --0.88 --1.5 v [sbd] reverse voltage v r i r =50 a50v forward voltage v f 1i f =70ma 0.52 0.55 v v f 2i f =100ma 0.8 0.85 v reverse current i r v r =25v 1 a interterminal capacitance c v r =10v, f=1mhz 8 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 10 ns package dimensions electrical connection unit : mm 2230 64 12 3 5 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain 6 : drain t op view 1.6 1.6 1.5 0.05 0.5 0.05 0.56 0.25 0.2 0.15 1 3 2 64 5 top view side view side view bottom view 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain 6 : drain sanyo : sch6
SCH2805 rev.0 i page 3 of 6 i www.onsemi.com pw=10 s d.c. 1% p. g 50 ? g s d i d = --0.3a r l =100 ? v dd = --30v v out SCH2805 v in 0v - -10v v in duty 10% 50 ? 100 ? 10 ? - -5v t rr 100ma 100ma 10ma 10 s switching time test circuit trr test circuit [mosfet] [sbd] - -1.0 - -0.8 - -0.6 - -0.4 - -0.2 0 - -0.50 - -0.25 --0.75 --1.00 --1.25 --1.50 --1.75 --2.00 - -0.6 - -0.5 0 i d -- v ds 0 - -0.4 - -0.3 - -0.2 - -0.1 i d -- v gs 0- -0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0 - -3.5 - -25 c - -25 c v ds = --10v t a=75 c it03941 it03942 - -3.0v - -4.0v -- 6 .0v - -10.0v - -3.5v v gs = --2.5v -- 2 -- 4 -- 6 -- 8 0- -10 --12 --14 --16 --18 --20 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 r ds (on) -- v gs it03943 t a=25 c - -40 --20 0 20 - -60 40 60 80 100 120 140 160 r ds (on) -- ta it06910 i d = --0.2a, v gs = --4v i d = --0.3a, v gs = --10v 25 c 25 c i d = --0.2a --0.3a t a=75 c static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c [mosfet] [mosfet] [mosfet] [mosfet]
SCH2805 rev.0 i page 4 of 6 i www.onsemi.com [mosfet] [mosfet] it06912 it06911 0 p d -- ta 0 0.8 0.6 0.4 0.2 20 40 60 80 100 120 140 160 3 - -0.01 - -0.1 a s o - -0.01 2 - -1.0 7 5 3 2 7 5 3 2 7 5 5 3 - -0.1 23 57 - -1.0 23 57 - -10 23 57 - -100 23 57 <10 s 1ms 10ms 100ms dc operation 100 s [mosfet] it03949 0 v gs -- q g 0 -- 7 -- 6 -- 5 -- 4 -- 3 -- 1 -- 2 - -10 -- 9 -- 8 2.0 0.5 1.0 1.5 2.5 v ds = --10v i d = --0.5a i dp = --2a i d = --0.5a operation in this area is limited by r ds (on). mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit t a=25 c single pulse mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit t otal gate charge, qg -- nc ambient temperature, ta -- c drain-to-source voltage, v ds -- v gate-to-source voltage, v gs -- v allowable power dissipation, p d -- w drain current, i d -- a 57 23 57 3 - -1.0 - -0.1 2 1.0 100 5 7 10 3 2 5 7 3 2 sw time -- i d v dd = --30v v gs = --10v it03947 - -10 --20 --30 --40 0- -50 --60 1.0 100 5 7 10 3 2 5 7 3 2 ciss, coss, crss -- v ds f=1mhz ciss coss crss it03948 [mosfet] [mosfet] t d (on) t r t f t d (off) i f -- v sd - -1.0 7 5 3 2 - -0.01 - -0.5 --0.6 - -0.4 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 - -0.1 7 5 3 2 v gs =0 -- 2 5 c 25 c t a=75 c it03946 [mosfet] ? yfs ? -- i d 10000 10 23 57 23 57 - -0.01 --1.0 - -0.1 100 1000 7 5 3 2 7 5 3 2 7 5 3 2 t a= --25 c 25 c 75 c it03945 [mosfet] v ds = --10v drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- ms diode forward voltage, v sd -- v forward current, i f -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf
SCH2805 rev.0 i page 5 of 6 i www.onsemi.com 2 1.0 323 57 2 0.1 357 0.01 7 0 0.4 0.8 2.0 2.4 1.2 1.6 2.8 id00264 i fsm -- t i s 20ms t [sbd] t ime, t -- s surge forward current, i fsm (peak) -- a current waveform 50hz sine wave 0.02 0.04 0.06 0.08 0.10 2 1.0 10 3 7 5 2 3 23 57 1.0 10 23 57 id00263 c -- v r f=1mhz 180 360 360 (3) (1) 0 00.020 .04 0.06 0.08 0.10 0.12 0.14 p f (av) -- i o it03952 (2) (4) 10 20 30 40 50 60 2 5 2 5 2 5 2 5 1000 100 10 1.0 2 5 0.1 0.01 0 id00261 i r -- v r 0.2 0.3 0.4 0.5 0.7 0.6 0.1 0 id00260 i f -- v f ta= 125 c 100 c 25 c 50 c 75 c 7 5 2 2 1.0 10 3 7 5 100 3 7 5 2 3 5 ta= 125 c 25 c [sbd] forward voltage, v f -- v forward current, i f -- ma [sbd] reverse voltage, v r -- v reverse current, i r -- a [sbd] a verage forward current, i o -- a (1) rectangular wave =60 (2) rectangular wave =120 (3) rectangular wave =180 (4) sine wave =180 a verage forward power dissipation, p f (av) -- w rectangular wave sine wave [sbd] reverse voltage, v r -- v interterminal capacitance, c -- pf
SCH2805 rev.0 i page 6 of 6 i www.onsemi.com SCH2805/d

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